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IRL540 PDF Datasheet

The IRL540 is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
11 IRL540
Power MOSFET ( Transistor )

International Rectifier
International Rectifier
pdf
10 IRL540
Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-

Fairchild Semiconductor
Fairchild Semiconductor
pdf
9 IRL540
Power MOSFET ( Transistor )

Power MOSFET IRL540, SiHL540 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 100 VGS = 5.0 V 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single 0.077 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating

Vishay Siliconix
Vishay Siliconix
pdf
8 IRL540A
Advanced Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.) 1 2 3 IRL540A BVDSS = 100 V RDS(on) = 0.058Ω ID = 28 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum

Fairchild
Fairchild
pdf
7 IRL540N
100V, 30A, 94W, HEXFET Power MOSFET

Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS(on) = 0.044Ω G S ID = 30A Description Fifth Generation HEXFETs from International

IRF
IRF
pdf
6 IRL540NLPBF
HEXFET Power MOSFET

PD- 95234 IRL540NS/LPbF • Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Infor

International Rectifier
International Rectifier
pdf

[1]    [2]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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