No | Part number | Description ( Function ) | Manufacturers | |
1 | IRL530NPBF | Power MOSFET ( Transistor ) • Lead-Free PD - 95451 IRL530NPbF www.irf.com 1 6/23/04 IRL530NPbF 2 www.irf.com IRL530NPbF www.irf.com 3 IRL530NPbF 4 www.irf.com IRL530NPbF www.irf.com 5 IRL530NPbF 6 www.irf.com IRL530NPbF www.irf.com 7 IRL530NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.13 |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRL530NPBF |
Part No | Description ( Function) | Manufacturers | |
IRL530 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.101Ω (Typ.) Absolute |
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IRL530 | Power MOSFET ( Transistor ) |
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IRL530 | Power MOSFET ( Transistor ) IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single D FEATURES 100 0.16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Spe |
Vishay |
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IRL530A | Advanced Power MOSFET Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) IRL530A BVDSS = 100 V |
Fairchild |
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IRL530N | HEXFET Power MOSFET PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G S ID = 17A Description Fifth Generation HEXFETs |
IRF |
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