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IRL530NPBF PDF Datasheet

The IRL530NPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 IRL530NPBF
Power MOSFET ( Transistor )

• Lead-Free PD - 95451 IRL530NPbF www.irf.com 1 6/23/04 IRL530NPbF 2 www.irf.com IRL530NPbF www.irf.com 3 IRL530NPbF 4 www.irf.com IRL530NPbF www.irf.com 5 IRL530NPbF 6 www.irf.com IRL530NPbF www.irf.com 7 IRL530NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.13

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRL530NPBF

Part No Description ( Function) Manufacturers PDF
IRL530   Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.101Ω (Typ.) Absolute

Fairchild Semiconductor
Fairchild Semiconductor
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IRL530   Power MOSFET ( Transistor )

International Rectifier
International Rectifier
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IRL530   Power MOSFET ( Transistor )

IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single D FEATURES 100 0.16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Spe

Vishay
Vishay
datasheet pdf
IRL530A   Advanced Power MOSFET

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) IRL530A BVDSS = 100 V

Fairchild
Fairchild
datasheet pdf
IRL530N   HEXFET Power MOSFET

PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G S ID = 17A Description Fifth Generation HEXFETs

IRF
IRF
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