Datasheet IRL3303PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL3303PBF	Power MOSFET ( Transistor ) • Lead-Free PD - 94887 IRL3303PbF HEXFET Power MOSFET www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF D.U.T + - RG Peak Diode Recovery dv/dt Test Circuit + Circuit L	International Rectifier

IRL3303 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL3303	HEXFET POWER MOSFET PD - 9.1322B IRL3303 HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V G S RDS(on) = 0.026Ω ID = 38A Description Fifth Generation HEXFETs	International Rectifier
IRL3303PBF	Power MOSFET ( Transistor ) • Lead-Free PD - 94887 IRL3303PbF HEXFET Power MOSFET www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF D.U.T + - RG Peak Diode Recovery dv/dt Test	International Rectifier
IRL3303S	HEXFET Power MOSFET PD - 9.1323B IRL3303S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.026Ω G ID	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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