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Datasheet IRL3303 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRL3303 | HEXFET POWER MOSFET PD - 9.1322B
IRL3303
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 30V
G S
RDS(on) = 0.026Ω ID = 38A
Description
Fifth Generation HEXFETs from International |
 International Rectifier |
 |
| 5 | IRL3303L | HEXFET Power MOSFET PD - 9.1323B
IRL3303S/L
l l l l l l l
Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 0.026Ω
G
ID = 38A
S
Descriptio |
International Rectifier |
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| 4 | IRL3303LPBF | Power MOSFET ( Transistor )
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET
D
IRL3303LPbF IRL3303SPbF
VDSS = 30V RD |
International Rectifier |
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| 3 | IRL3303PBF | Power MOSFET ( Transistor ) • Lead-Free
PD - 94887
IRL3303PbF
HEXFET Power MOSFET
www.irf.com
1 12/11/03
IRL3303PbF
2 www.irf.com
IRL3303PbF
www.irf.com
3
IRL3303PbF
4 www.irf.com
IRL3303PbF
www.irf.com
5
IRL3303PbF
6 www.irf.com
IRL3303PbF
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit L |
International Rectifier |
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