No | Part number | Description ( Function ) | Manufacturers | |
1 | IRL3302SPBF | HEXFET Power MOSFET PD- 95587 IRL3302SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.020Ω G Lead-Free S ID = 39A www.irf.com 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com IRL3302SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Consid |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRL3302SPBF |
Part No | Description ( Function) | Manufacturers | |
IRL3302 | HEXFET Power MOSFET PRELIMINARY l Advanced Process Technology l Optimized for 4.5V Gate Drive l Ideal for CPU Core DC-DC Converters l 150°C Operating Temperature l Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in t |
International Rectifier |
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IRL3302PBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Optimized for 4.5V Gate Drive l Ideal for CPU Core DC-DC Converters l 150°C Operating Temperature l Fast Switching l Lead-Free Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in t |
International Rectifier |
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IRL3302S | HEXFET Power MOSFET PD - 9.1692A PRELIMINARY l l l l l IRL3302S HEXFET® Power MOSFET D Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching VDSS = 20V G S RDS(on) = 0.020W ID = 39A Description These HEXFET Power MOSFET |
International Rectifier |
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2N3302 | GENERAL PURPOSE TRANSISTOR 2N3299 2N3300 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR 2N3301 2N3302 MAXIMUM RATINGS Rating Collector-Emitter Voltage (Applicable to 10 mAdc) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO ic Value 30 60 |
Motorola Semiconductors |
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2N3302 | Transistor |
New Jersey Semi-Conductor |
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