Datasheet IRL2910PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL2910PBF	Power MOSFET ( Transistor ) • Lead-Free PD - 94993 IRL2910PbF www.irf.com 1 2/10/04 IRL2910PbF 2 www.irf.com IRL2910PbF www.irf.com 3 IRL2910PbF 4 www.irf.com IRL2910PbF www.irf.com 5 IRL2910PbF 6 www.irf.com IRL2910PbF www.irf.com 7 IRL2910PbF TO-220AB Package Outline Dimensions are shown in millimeters (in	International Rectifier

IRL2910 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL2910	HEXFET Power MOSFET PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS(on) = 0.026Ω G ID = 55A S	International Rectifier
IRL2910PBF	Power MOSFET ( Transistor ) • Lead-Free PD - 94993 IRL2910PbF www.irf.com 1 2/10/04 IRL2910PbF 2 www.irf.com IRL2910PbF www.irf.com 3 IRL2910PbF 4 www.irf.com IRL2910PbF www.irf.com 5 IRL2910PbF 6 www.irf.com IRL2910PbF www.irf.com 7 IRL2910PbF TO-220AB Package Outline Dimensions are show	International Rectifier
IRL2910SPbF	HEXFET Power MOSFET PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advance	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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