Datasheet IRL2203NLPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL2203NLPBF	Power MOSFET ( Transistor ) PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te	International Rectifier

IRL2203NL Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL2203NL	Power MOSFET ( Transistor ) PD - 94394 HEXFET® Power MOSFET l l l l l l IRL2203NS IRL2203NL VDSS = 30V RDS(on) = 7.0mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 116A Description Advanced H	International Rectifier
IRL2203NLPbF	Power MOSFET ( Transistor ) PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize ad	International Rectifier
IRL2203NL	Power MOSFET ( Transistor ) IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A Description Advanced HEX	FreesCale

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