No | Part number | Description ( Function ) | Manufacturers | |
1 | IRHM4260 | RADIATION HARDENED POWER MOSFET THRU-HOLE PD - 91332D RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-254AA) Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω 300K Rads (Si) 0.070Ω 600K Rads (Si) 0.070Ω 1000K Rads (Si) 0.070Ω ID 35*A 35*A 35*A 35*A REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY IRHM7260 JANSR2N7433 200V |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRHM4260 |
Part No | Description ( Function) | Manufacturers | |
2N4260 | Chip Type 2C4261 Geometry 0014 Polarity PNP Data Sheet No. 2C4261 Chip Type 2C4261 Geometry 0014 Polarity PNP Generic Packaged Parts: 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for low voltage, low gain R |
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2N4260 | SWITCHING TRANSISTOR 2N4260 2N4261 2N4261 JAN, JTX AVAILABLE CASE 20, STYLE 10 TO-72 SWITCHING TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25° |
Motorola Semiconductors |
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2N4260 | PNP Transistor |
New Jersey Semiconductor |
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2N4260UB | Chip Type 2C4261 Geometry 0014 Polarity PNP Data Sheet No. 2C4261 Chip Type 2C4261 Geometry 0014 Polarity PNP Generic Packaged Parts: 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for low voltage, low gain R |
Semicoa Semiconductor |
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