IRHF9230 PDF Datasheet

PD - 91312E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID -4.0A -4.0A IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7390 JANSF2N7390 International Rectifier’s

12-Bit, 170 MSPS/210 MSPS/250 MSPS, 1.8 V Analog-to-Digital Converter AD9230 FEATURES SNR = 64.9 dBFS @ fIN up to 70 MHz @ 250 MSPS ENOB of 10.4 @ fIN up to 70 MHz @ 250 MSPS (−1.0 dBFS) SFDR = −79 dBc @ fIN up to 70 MHz @ 250 MSPS (−1.0 dBFS) Excellent linearity DNL = ±0

BYD Microelectronics Co., Ltd. General Description The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = -20V z ID = -2.8A z Low on-state resist

BYD Microelectronics Co., Ltd. General Description The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = 20V z ID = 3 A z Low on-state resistanc

BUK9230-100B TrenchMOS™ logic level FET M3D300 Rev. 01 — 22 January 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

BUK9230-55A TrenchMOS™ logic level FET Rev. 03 — 30 January 2001 M3D300 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resi