No | Part number | Description ( Function ) | Manufacturers | |
1 | IRHF63230 | Power MOSFET ( Transistor ) PD-97311 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF67230 100K Rads (Si) IRHF63230 300K Rads (Si) RDS(on) 0.145Ω 0.145Ω ID 9.1A 9.1A IRHF67230 200V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single E |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRHF63230 |
Part No | Description ( Function) | Manufacturers | |
IRHNJ63230 | RADIATION HARDENED POWER MOSFET PD-96923B RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A IRHNJ67230 200V, N-CHANNEL TECHNOLOGY SMD-0.5 International Rectifier’s R6TM t |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |