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Datasheet IRGSL4B60KD1PBF Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRGSL4B60KD1PBF | Insulated Gate Bipolar Transistor PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coef |
International Rectifier |
IRGSL4B60KD1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRGSL4B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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IRGSL4B60KD1PbF | Insulated Gate Bipolar Transistor |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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