Datasheet IRGSL30B60KPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRGSL30B60KPBF	Insulated Gate Bipolar Transistor PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C �	International Rectifier

IRGSL30B60K Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRGSL30B60KPbF	Insulated Gate Bipolar Transistor PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperatur	International Rectifier
IRGSL30B60K	INSULATED GATE BIPOLAR TRANSISTOR PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatur	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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