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Datasheet IRGSL30B60KPBF Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRGSL30B60KPBF | Insulated Gate Bipolar Transistor PD - 97003
INSULATED GATE BIPOLAR TRANSISTOR
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C � |
International Rectifier |
IRGSL30B60K Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRGSL30B60KPbF | Insulated Gate Bipolar Transistor |
International Rectifier |
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IRGSL30B60K | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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