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Datasheet IRGS30B60K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRGS30B60K | INSULATED GATE BIPOLAR TRANSISTOR PD - 94799
INSULATED GATE BIPOLAR TRANSISTOR
C
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES = 600V IC = 50A, TC=100°C at TJ=175°C
Features
• • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maxim |
 International Rectifier |
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| 1 | IRGS30B60KPBF | Insulated Gate Bipolar Transistor PD - 97003
INSULATED GATE BIPOLAR TRANSISTOR
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C � |
International Rectifier |
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