Datasheet IRGR2B60KDPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRGR2B60KDPBF	INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF C VCES = 600V IC = 3.7A, TC = 100°C G E Features  Low VCE (ON) Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode	International Rectifier

IRGR2B60KD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRGR2B60KDPBF	INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF C VCES = 600V IC = 3.7A, TC = 100°C G E Features  Low VCE (ON) Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA �	International Rectifier

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