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IRGPH50S PDF Datasheet

The IRGPH50S is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRGPH50S
INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 33A n-channel Descripti

IRF
IRF
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Recommended search results related to IRGPH50S

Part No Description ( Function) Manufacturers PDF
IRGPH50F   INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.761A IRGPH50F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed

IRF
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IRGPH50FD2   INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency

IRF
IRF
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IRGPH50M   INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig

IRF
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IRGPH50MD2   INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast

IRF
IRF
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IRGPH50U   (IRGxxxx) Discrete IGBTs

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International Rectifier
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