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Datasheet IRGPH40 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRGPH40 | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
Index
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PD - 9.764
IRGPH40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Fast Speed IGBT
VCES = 1200V V |
 IRF |
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| 5 | IRGPH40F | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
Index
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PD - 9.764
IRGPH40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Fast Speed IGBT
VCES = 1200V V |
IRF |
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| 4 | IRGPH40FD2 | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
Index
Next Data Sheet
PD - 9.1117
IRGPH40FD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fi |
IRF |
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| 3 | IRGPH40M | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
Index
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Preliminary Data Sheet PD - 9.1029
IRGPH40M
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz)
G E |
IRF |
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