No | Part number | Description ( Function ) | Manufacturers | |
2 | IRGPC50F | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet Index Next Data Sheet PD - 9.695A IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 1.7V @VGE = 15V, I C = 39A n-channel Description Insulated Gate Bip |
IRF |
|
1 | IRGPC50FD2 | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet Index Next Data Sheet PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Fast CoPack IGBT VCES = 600V VCE(sat) � |
IRF |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |