No | Part number | Description ( Function ) | Manufacturers | |
1 | IRGP4790-EPBF | Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant I |
International Rectifier |
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Recommended search results related to IRGP4790-EPBF |
Part No | Description ( Function) | Manufacturers | |
IRGP4790D-EPbF | INSULATED GATE BIPOLAR TRANSISTOR IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inve |
International Rectifier |
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IRGP4790DPbF | INSULATED GATE BIPOLAR TRANSISTOR IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inve |
International Rectifier |
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IRGP4790PBF | Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximu |
International Rectifier |
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1N4790 | (1N4xxx) VARACTOR DIODE
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MSI Electronics |
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1N4790 | Diode VAR Cap Single 28V 15pF 2-Pin DO-7 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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