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IRGP4069D-EPBF PDF Datasheet

The IRGP4069D-EPBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 IRGP4069D-EPBF
INSULATED GATE BIPOLAR TRANSISTOR

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distr

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRGP4069D-EPBF

Part No Description ( Function) Manufacturers PDF
IRGP4069-EPbF   INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient �

International Rectifier
International Rectifier
datasheet pdf
IRGP4069DPbF   INSULATED GATE BIPOLAR TRANSISTOR

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100%

International Rectifier
International Rectifier
datasheet pdf
IRGP4069PbF   INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient �

International Rectifier
International Rectifier
datasheet pdf
1N4069   HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES

Microsemi Corporation
Microsemi Corporation
datasheet pdf
1N4069   12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5%

• 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005%/°C AND 0.002%/°C • HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE 1N4

Compensated Deuices Incorporated
Compensated Deuices Incorporated
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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