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IRGMC30F PDF Datasheet

The IRGMC30F is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 IRGMC30F
INSULATED GATE BIPOLAR TRANSISTOR

PD -90714B IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.1V @VGE = 15V, IC = 12A

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRGMC30F

Part No Description ( Function) Manufacturers PDF
IRGMC30U   INSULATED GATE BIPOLAR TRANSISTOR

PD -90715B IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fas

International Rectifier
International Rectifier
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0230200L   Silicon Controlled Rectifier

Microsemi Corporation
Microsemi Corporation
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0230200L   Silicon Controlled Rectifier

Microsemi Corporation
Microsemi Corporation
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0230300L   Silicon Controlled Rectifier

Microsemi Corporation
Microsemi Corporation
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0230300L   Silicon Controlled Rectifier

Microsemi Corporation
Microsemi Corporation
datasheet pdf

[1]    

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