No | Part number | Description ( Function ) | Manufacturers | |
1 | IRGMC30F | INSULATED GATE BIPOLAR TRANSISTOR PD -90714B IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.1V @VGE = 15V, IC = 12A |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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IRGMC30U | INSULATED GATE BIPOLAR TRANSISTOR PD -90715B IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fas |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |