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IRGIB10B60KD1PBF PDF Datasheet

The IRGIB10B60KD1PBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRGIB10B60KD1PBF
INSULATED GATE BIPOLAR TRANSISTOR

PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temper

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRGIB10B60KD1PBF

Part No Description ( Function) Manufacturers PDF
IRGIB10B60KD1   INSULATED GATE BIPOLAR TRANSISTOR

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

International Rectifier
International Rectifier
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IRGIB10B60KD1P   INSULATED GATE BIPOLAR TRANSISTOR

PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Character

International Rectifier
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ASI10601   NPN SILICON RF POWER TRANSISTOR

HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System .112x45° A B C E ØC E B H I J MAXIMUM RATING

Advanced Semiconductor
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LBT10601   SAW Filter

China Electronics Technology Group Corporation No.26 Research Institute 106.8MHz SAW Filter 8.1MHz Bandwidth Part Number: LBT10601 www.sipatsaw.com SIPAT Co., Ltd. Specifications Parameter Center Frequency Insertion Loss 3 dB Bandwidth Unit MHz dB MHz MHz

SIPAT
SIPAT
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PTFA210601E   Thermally-Enhanced High Power RF LDMOS FET

PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include

Infineon
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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On Semiconductor
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