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IRGBC30U PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 IRGBC30U
INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rect

International Rectifier
International Rectifier
pdf
1 IRGBC30UD2
INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 600V VCE(sat)

International Rectifier
International Rectifier
pdf



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