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IRGBC30F PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 IRGBC30F
INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.1V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bi

International Rectifier
International Rectifier
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1 IRGBC30FD2
INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Fast CoPack IGBT VCES = 600V VCE(sat)

International Rectifier
International Rectifier
pdf



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