| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IRGBC20M | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.5V @VGE = 15V, I C = 8.0A n-channel Descri |
 International Rectifier |
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Recommended search results related to IRGBC20M |
| Part No | Description ( Function) | Manufacturers | |
| IRGBC20F | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.8V @VGE = |
International Rectifier |
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| IRGBC20K-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Sh |
International Rectifier |
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| IRGBC20KD2 | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating freq |
International Rectifier |
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| IRGBC20KD2-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast |
International Rectifier |
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| IRGBC20S | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.687A IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.4V @VGE |
International Rectifier |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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