Datasheet IRGB4X0U Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRGB4X0U	(IRGxxxx) Discrete IGBTs w w a D . w S a t e e h U 4 t m o .c w w w a .D S ta e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	International Rectifier

IRGB4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRGB4062DPBF	(IRGB4062DPBF / IRGP4062DPBF) INSULATED GATE BIPOLAR TRANSISTOR IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA	International Rectifier
IRGB4610DPBF	INSULATED GATE BIPOLAR TRANSISTOR IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF C C C C E G C E VCE(on) typ. = 1.7V @ 6A n-channel G	International Rectifier
IRGB4056DPBF	INSULATED GATE BIPOLAR TRANSISTOR PD - 97188 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSO	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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