No | Part number | Description ( Function ) | Manufacturers | |
1 | IRGB4630DPBF | Insulated Gate Bipolar Transistor IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A G E n-channel E GC E C G GCE GCE IRGS4630DPbF IRGB4630DPbF IRGP4630DPbF IRGP4630D-EPbF D2Pak TO-220AC TO-247AC TO-247AD Applications • Appliance D |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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1PMT4630 | LOW NOISE 1 WATT Zener Diodes POWERMITE® 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax: (480) 947-1503 LOW NOISE 1 WATT Zener Diodes 1PMT4614 thru 1PMT4627 and 1PMT4099 thru 1PMT4135 In Microsemi's Powermite® surface mount package, these zener diodes provide power-handling capabilities |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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