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IRG7PK35UD1-EPBF PDF Datasheet

The IRG7PK35UD1-EPBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRG7PK35UD1-EPBF
Insulated Gate Bipolar Transistor

  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G   C C C   G E C E G C E Applications  Induction heating  Microwave ovens  Soft switching applications n-channel IRG7PK35UD1PbF  TO‐247AC  G Gate IRG7PK35

International Rectifier
International Rectifier
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IRG7PK35UD1PbF   Insulated Gate Bipolar Transistor

  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G   C C C   G E C E G C E Applications  Induction heating  Microwave

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