No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG7PH37K10DPBF | INSULATED GATE BIPOLAR TRANSISTOR IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A G E C G G n-channel Applications • Industrial Motor Drive • UPS G Gate G IRG7PH37K10DPbF TO‐247AC C Collector C E C E G IRG7PH37K10D‐EPbF TO� |
International Rectifier |
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