No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG7PH35UD-EP | INSULATED GATE BIPOLAR TRANSISTOR PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH35UDPbF IRG7PH35UD-EP C VC |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRG7PH35UD-EP |
Part No | Description ( Function) | Manufacturers | |
IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight para |
International Rectifier |
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IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight para |
International Rectifier |
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IRG7PH35UD1-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching |
International Rectifier |
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IRG7PH35UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitiv |
International Rectifier |
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IRG7PH35UD1PbF | INSULATED GATE BIPOLAR TRANSISTOR PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |