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IRG7PH28UD1MPBF PDF Datasheet

The IRG7PH28UD1MPBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRG7PH28UD1MPBF
INSULATED GATE BIPOLAR TRANSISTOR

  IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode  1300Vpk repetitive transient capacity  100% of

International Rectifier
International Rectifier
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Part No Description ( Function) Manufacturers PDF
IRG7PH28UD1PBF   INSULATED GATE BIPOLAR TRANSISTOR

  IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses �

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