No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG7PH28UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF diode 1300Vpk repetitive transient capacity 100% of |
International Rectifier |
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IRG7PH28UD1PBF | INSULATED GATE BIPOLAR TRANSISTOR IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) trench IGBT technology Low switching losses � |
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