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IRG4RC10KDPBF PDF Datasheet

The IRG4RC10KDPBF is Insulated Gate Bipolar Transisto. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRG4RC10KDPBF
INSULATED GATE BIPOLAR TRANSISTO

PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEX

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRG4RC10KDPBF

Part No Description ( Function) Manufacturers PDF
IRG4RC10K   INSULATED GATE BIPOLAR TRANSISTO

PD 91735A IRG4RC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 �

International Rectifier
International Rectifier
datasheet pdf
IRG4RC10KD   INSULATED GATE BIPOLAR TRANSISTO

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides ti

International Rectifier
International Rectifier
datasheet pdf
IRG4RC10KPBF   INSULATED GATE BIPOLAR TRANSISTO

PD 95389 IRG4RC10KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3

International Rectifier
International Rectifier
datasheet pdf
IRG4RC10S   INSULATED GATE BIPOLAR TRANSISTOR

PD - 91732A IRG4RC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter dist

International Rectifier
International Rectifier
datasheet pdf
IRG4RC10SD   INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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