No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG4RC10KDPBF | INSULATED GATE BIPOLAR TRANSISTO PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEX |
International Rectifier |
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Recommended search results related to IRG4RC10KDPBF |
Part No | Description ( Function) | Manufacturers | |
IRG4RC10K | INSULATED GATE BIPOLAR TRANSISTO PD 91735A IRG4RC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 � |
International Rectifier |
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IRG4RC10KD | INSULATED GATE BIPOLAR TRANSISTO PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides ti |
International Rectifier |
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IRG4RC10KPBF | INSULATED GATE BIPOLAR TRANSISTO PD 95389 IRG4RC10KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 |
International Rectifier |
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IRG4RC10S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91732A IRG4RC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter dist |
International Rectifier |
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IRG4RC10SD | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |