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Datasheet IRG4PH40UD2-E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRG4PH40UD2-E | Insulated Gate Bipolar Transistor PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery an |
IRF |
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1 | IRG4PH40UD2-EP | Insulated Gate Bipolar Transistor PD - 95239
IRG4PH40UD2-EP
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads Lead-Free |
IRF |
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Número de pieza | Descripción | Fabricantes | |
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