No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG4PC60FPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95566A IRG4PC60FPbF INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. Lead-Free C G E n-channel VCES = 600V VCE(on) typ |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
IRG4PC60F | INSULATED GATE BIPOLAR TRANSISTOR PD - 94442 IRG4PC60F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher effic |
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IRG4PC60F-PPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95567 IRG4PC60F-PPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher ef |
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IRG4PC60U | INSULATED GATE BIPOLAR TRANSISTOR PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher |
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IRG4PC60UPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95568 IRG4PC60UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and hi |
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1410460 | Bobbin Type Inductors |
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