No | Part number | Description ( Function ) | Manufacturers | |
3 | IRG4PC50S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91581A IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15 |
IRF |
|
2 | IRG4PC50SDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 97316 IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Standard Speed CoPack IGBT Featur |
International Rectifier |
|
1 | IRG4PC50SPBF | INSULATED GATE BIPOLAR TRANSISTOR • Lead-Free PD - 95131 IRG4PC50SPbF www.irf.com 1 3/18/04 IRG4PC50SPbF 2 www.irf.com IRG4PC50SPbF www.irf.com 3 IRG4PC50SPbF 4 www.irf.com IRG4PC50SPbF www.irf.com 5 IRG4PC50SPbF 6 www.irf.com IRG4PC50SPbF www.irf.com 7 IRG4PC50SPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B- 20.30 (.800) 19.70 (.775) |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |