No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG4PC50FDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ul |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
IRG4PC50F | INSULATED GATE BIPOLAR TRANSISTOR PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • |
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IRG4PC50F-EPBF | Fast Speed IGBT PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 |
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IRG4PC50FD | INSULATED GATE BIPOLAR TRANSISTOR PD 91469B IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution an |
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IRG4PC50FPBF | Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR PD - 95398 IRG4PC50FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
International Rectifier |
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IRG4PC50K | INSULATED GATE BIPOLAR TRANSISTOR PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |