No | Part number | Description ( Function ) | Manufacturers | |
5 | IRG4PC50F | INSULATED GATE BIPOLAR TRANSISTOR PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = |
IRF |
|
4 | IRG4PC50F-EPBF | Fast Speed IGBT PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AD package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. |
International Rectifier |
|
3 | IRG4PC50FD | INSULATED GATE BIPOLAR TRANSISTOR PD 91469B IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-reco |
IRF |
|
2 | IRG4PC50FDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ul |
International Rectifier |
|
1 | IRG4PC50FPBF | Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR PD - 95398 IRG4PC50FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C Fast Speed IGBT VCES = 600 |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |