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IRG4PC40KPBF PDF Datasheet

The IRG4PC40KPBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRG4PC40KPBF
INSULATED GATE BIPOLAR TRANSISTOR

PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRG4PC40KPBF

Part No Description ( Function) Manufacturers PDF
AUIRG4PC40S-E   Insulated Gate Bipolar Transistor

  AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor Features  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 

International Rectifier
International Rectifier
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IRG4PC40F   INSULATED GATE BIPOLAR TRANSISTOR

PD 91463B IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation

IRF
IRF
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IRG4PC40FD   INSULATED GATE BIPOLAR TRANSISTOR

PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution an

IRF
IRF
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IRG4PC40FDPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter dis

International Rectifier
International Rectifier
datasheet pdf
IRG4PC40FPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD -95430 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40FPbF Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficien

International Rectifier
International Rectifier
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[1]    

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