No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG4PC40KPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
AUIRG4PC40S-E | Insulated Gate Bipolar Transistor AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 |
International Rectifier |
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IRG4PC40F | INSULATED GATE BIPOLAR TRANSISTOR PD 91463B IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation |
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IRG4PC40FD | INSULATED GATE BIPOLAR TRANSISTOR PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution an |
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IRG4PC40FDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter dis |
International Rectifier |
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IRG4PC40FPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95430 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40FPbF Fast Speed IGBT Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficien |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |