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Datasheet IRG4PC30U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4PC30U | INSULATED GATE BIPOLAR TRANSISTOR PD 91461E
IRG4PC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan |
 International Rectifier |
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| 3 | IRG4PC30UD | INSULATED GATE BIPOLAR TRANSISTOR PD 91462B
IRG4PC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
International Rectifier |
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| 2 | IRG4PC30UDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95327
IRG4PC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficien |
International Rectifier |
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| 1 | IRG4PC30UPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 94923
IRG4PC30UPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Gene |
International Rectifier |
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