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Datasheet IRG4PC30F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4PC30F | INSULATED GATE BIPOLAR TRANSISTOR PD 91459B
IRG4PC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stand |
 International Rectifier |
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| 3 | IRG4PC30FD | INSULATED GATE BIPOLAR TRANSISTOR PD 91460B
IRG4PC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
International Rectifier |
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| 2 | IRG4PC30FDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95556
IRG4PC30FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher eff |
International Rectifier |
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| 1 | IRG4PC30FPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -94920
IRG4PC30FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry stan |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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