No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG4IBC30UDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD- 95598A IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recov |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
IRG4IBC30FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in har |
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IRG4IBC30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter dis |
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IRG4IBC30KDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter di |
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IRG4IBC30S | INSULATED GATE BIPOLAR TRANSISTOR PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • |
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IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry st |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |