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IRG4IBC30UDPBF PDF Datasheet

The IRG4IBC30UDPBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRG4IBC30UDPBF
INSULATED GATE BIPOLAR TRANSISTOR

PD- 95598A IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recov

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRG4IBC30UDPBF

Part No Description ( Function) Manufacturers PDF
IRG4IBC30FD   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.59V votage drop 2.5kV, 60s insulation voltage … 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in har

International Rectifier
International Rectifier
datasheet pdf
IRG4IBC30KD   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter dis

International Rectifier
International Rectifier
datasheet pdf
IRG4IBC30KDPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter di

International Rectifier
International Rectifier
datasheet pdf
IRG4IBC30S   INSULATED GATE BIPOLAR TRANSISTOR

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation •

International Rectifier
International Rectifier
datasheet pdf
IRG4IBC30SPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry st

International Rectifier
International Rectifier
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[1]    

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1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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