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IRG4IBC30S PDF Datasheet

The IRG4IBC30S is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
2 IRG4IBC30S
INSULATED GATE BIPOLAR TRANSISTOR

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-220 Full-Pak C VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A N-c

International Rectifier
International Rectifier
pdf
1 IRG4IBC30SPBF
INSULATED GATE BIPOLAR TRANSISTOR

PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-220 Full-Pak • Lead-Free IRG4IBC30SPbF C G E N-channel VCES = 600V VCE(on) typ. = 1.4

International Rectifier
International Rectifier
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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