No | Part number | Description ( Function ) | Manufacturers | |
2 | IRG4IBC30S | INSULATED GATE BIPOLAR TRANSISTOR PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-220 Full-Pak C VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A N-c |
International Rectifier |
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1 | IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-220 Full-Pak • Lead-Free IRG4IBC30SPbF C G E N-channel VCES = 600V VCE(on) typ. = 1.4 |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |