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Datasheet IRG4IBC20UD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRG4IBC20UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD -91752A
IRG4IBC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co |
 International Rectifier |
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| 1 | IRG4IBC20UDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -94917A
IRG4IBC20UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
VCES = 600V
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard |
International Rectifier |
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