No | Part number | Description ( Function ) | Manufacturers | |
2 | IRG4BC40K | HEXFET Power MOSFET PD - 91592B IRG4BC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(o |
International Rectifier |
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1 | IRG4BC40KPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95174 IRG4BC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 6 |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |