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Datasheet IRG4BC30K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRG4BC30K | INSULATED GATE BIPOLAR TRANSISTOR PD - 91596A
IRG4BC30K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter dist |
 International Rectifier |
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| 6 | IRG4BC30K-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91619B
IRG4BC30K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter di |
International Rectifier |
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| 5 | IRG4BC30K-SPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD - 95785
IRG4BC30K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides |
International Rectifier |
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| 4 | IRG4BC30KD | 600V, 16A, INSULATED GATE BIPOLAR TRANSISTOR PD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter dis |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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