No | Part number | Description ( Function ) | Manufacturers | |
1 | IRG4BC30FD-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 96929 IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES = 600V Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged wi |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRG4BC30FD-S |
Part No | Description ( Function) | Manufacturers | |
AUIRG4BC30S-S | INSULATED GATE BIPOLAR TRANSISTOR AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR C Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.4V Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Lead-Free, RoHS Complian |
IRF |
|
AUIRG4BC30S-SL | INSULATED GATE BIPOLAR TRANSISTOR AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR C Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.4V Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Lead-Free, RoHS Complian |
IRF |
|
AUIRG4BC30U-S | UltraFast Speed IGBT AUTOMOTIVE GRADE PD - 96335 INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualifi |
International Rectifier |
|
AUIRG4BC30U-SL | UltraFast Speed IGBT AUTOMOTIVE GRADE PD - 96335 INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualifi |
International Rectifier |
|
IRG4BC30F | INSULATED GATE BIPOLAR TRANSISTOR PD - 91450B IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |