No | Part number | Description ( Function ) | Manufacturers | |
7 | IRG4BC20K | INSULATED GATE BIPOLAR TRANSISTOR PD - 91600A IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated |
IRF |
|
6 | IRG4BC20K-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91620A IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rate |
IRF |
|
5 | IRG4BC20K-SPBF | Short Circuit Rated UltraFast IGBT 95167 IRG4BC20K-SPbF Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free Short Circuit Rated UltraFast IGBT C VCES = 60 |
International Rectifier |
|
4 | IRG4BC20KD | INSULATED GATE BIPOLAR TRANSISTOR PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged wi |
IRF |
|
3 | IRG4BC20KD-S | INSULATED GATE BIPOLAR TRANSISTOR PD -91598A IRG4BC20KD-S Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Short Circuit Rated UltraFast IGBT VCES = 600V • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher effic |
IRF |
|
2 | IRG4BC20KD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged w |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |