No | Part number | Description ( Function ) | Manufacturers | |
7 | IRFZ48N | N-channel enhancement mode TrenchMOS transistor Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in |
NXP Semiconductors |
|
6 | IRFZ48N | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE |
International Rectifier |
|
5 | IRFZ48NL | (IRFZ48NL / IRFZ48NS) Advanced Process Technology PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRFZ48NS IRFZ48NL VDSS = 55V RDS(on) = 0.014Ω Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve |
International Rectifier |
|
4 | IRFZ48NLPBF | HEXFET Power MOSFET l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ48NSPbF IRFZ48NLPbF D PD - 95125 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.014Ω ID = 64A S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced pr |
International Rectifier |
|
3 | IRFZ48NPBF | HEXFET Power MOSFET PD - 94991 IRFZ48NPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 14mΩ G S ID = 64A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing |
International Rectifier |
|
2 | IRFZ48NS | (IRFZ48NL / IRFZ48NS) Advanced Process Technology PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRFZ48NS IRFZ48NL VDSS = 55V RDS(on) = 0.014Ω Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |