No | Part number | Description ( Function ) | Manufacturers | |
2 | IRFZ44L | (IRFZ44ES / IRFZ44L) Power MOSFET PD - 9.1714 PRELIMINARY IRFZ44ES/L HEXFET® Power MOSFET D l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique |
International Rectifier |
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1 | IRFZ44L | Power MOSFET ( Transistor ) IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single 0.028 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |