No | Part number | Description ( Function ) | Manufacturers | |
45 | IRFZ44 | Power MOSFET ( Transistor ) |
IR |
|
44 | IRFZ44 | (IRFZ40 - IRFZ45) N-Channel Power MOSFETS |
Samsung Electronics |
|
43 | IRFZ44 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.020Ω (Typ.) IRFZ44 BVDSS = 60 V RDS(on) = 0.024Ω ID = 50 A TO-220 |
Fairchild |
|
42 | IRFZ44 | Power MOSFET ( Transistor ) IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 67 18 25 Single D FEATURES 60 0.028 • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIAN |
Vishay |
|
41 | IRFZ44 | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
|
40 | IRFZ44 | N-CHANNEL MOSFET IRFZ44 Rev.D Mar.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 雪崩强化技术,强化门氧化技术,低输入电容,改良的阈门控制,宽阔安全的工作区域,漏电流小,导 通电阻小。 Avalanche rugged technology, rugged gate oxide technology, |
BLUE ROCKET ELECTRONICS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |