No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFZ34VPBF | HEXFET Power MOSFET PD - 94868 IRFZ34VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ G S ID = 30A Advanced HEXFET® Power MOSFETs from International Rectifier utilize |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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IRFZ34 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS |
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IRFZ34 | Power MOSFET ( Transistor ) IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 46 11 22 Single D FEATURES 60 0.050 • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Parallelin |
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